? semiconductor components industries, llc, 2015 october, 2016 ? rev. 15 1 publication order number: mmbt2907alt1/d mmbt2907al, SMMBT2907AL general purpose transistors pnp silicon features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage v ceo ?60 vdc collector ?base voltage v cbo ?60 vdc emitter ?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?600 madc collector current ? peak (note 3) i cm ?1200 madc thermal characteristics characteristic symbol max unit total device dissipation ? fr? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation ? alumina substrate, (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w total device dissipation ? heat spreader or equivalent, (note 4) @t a = 25 c p d 350 mw thermal resistance, junction?to?ambient r ja 357 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. reference soa curve. 4. heat spreader or equivalent = 450 mm 2 , 2 oz. 2f = device code m = date code* = pb?free package www. onsemi.com collector 3 1 base 2 emitter device package shipping ? ordering information mmbt2907alt3g SMMBT2907ALt3g sot?23 (pb?free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. mmbt2907alt1g SMMBT2907ALt1g sot?23 (pb?free) (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. 3000 / tape & reel 10,000 / tape & reel sot?23 (to?236ab) case 318 style 6 marking diagram 1 2 1 3 2f m
mmbt2907al, SMMBT2907AL www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (note 5) (i c = ?1.0 madc, i b = 0) (i c = ?10 madc, i b = 0) v (br)ceo ?60 ?60 ? ? vdc collector ?base breakdown voltage (i c = ?10 adc, i e = 0) v (br)cbo ?60 ? vdc emitter ?base breakdown voltage (i e = ?10 adc, i c = 0) v (br)ebo ?5.0 ? vdc collector cutoff current (v ce = ?30 vdc, v eb(off) = ?0.5 vdc) i cex ? ?50 nadc collector cutoff current (v cb = ?50 vdc, i e = 0) (v cb = ?50 vdc, i e = 0, t a = 125 c) i cbo ? ? ?0.010 ?10 adc base cutoff current (v ce = ?30 vdc, v eb(off) = ?0.5 vdc) i bl ? ?50 nadc on characteristics dc current gain (i c = ?0.1 madc, v ce = ?10 vdc) (i c = ?1.0 madc, v ce = ?10 vdc) (i c = ?10 madc, v ce = ?10 vdc) (i c = ?150 madc, v ce = ?10 vdc) (i c = ?500 madc, v ce = ?10 vdc) (note 5) h fe 75 100 100 100 50 ? ? ? 300 ? ? collector ?emitter saturation voltage (note 5) (i c = ?150 madc, i b = ?15 madc) (note 5) (i c = ?500 madc, i b = ?50 madc) v ce(sat) ? ? ?0.4 ?1.6 vdc base ?emitter saturation voltage (note 5) (i c = ?150 madc, i b = ?15 madc) (i c = ?500 madc, i b = ?50 madc) v be(sat) ? ? ?1.3 ?2.6 vdc small? signal characteristics current ?gain ? bandwidth product (notes 5, 6), (i c = ?50 madc, v ce = ?20 vdc, f = 100 mhz) f t 200 ? mhz output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = ?2.0 vdc, i c = 0, f = 1.0 mhz) c ibo ? 30 switching characteristics turn?on time (v cc = ?30 vdc, i c = ?150 madc, i b1 = ?15 madc) t on ? 45 ns delay time t d ? 10 rise time t r ? 40 turn?off time (v cc = ?6.0 vdc, i c = ?150 mad c, i b1 = i b2 = ?15 madc) (v cc = ?6.0 vdc, i c = ?150 mad c, i b1 = i b2 = ?15 madc) t off ? 100 storage time t s ? 80 fall time t f ? 30 5. pulse test: pulse width 300 s, duty cycle 2.0%. 6. f t is defined as the frequency at which |h fe | extrapolates to unity. 0 0 -16 v 200 ns 50 1.0 k 200 -30 v to oscilloscope rise time 5.0 ns +15 v -6.0 v 1.0 k 37 50 1n916 1.0 k 200 ns -30 v to oscilloscope rise time 5.0 ns input z o = 50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns input z o = 50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns figure 1. delay and rise time test circuit figure 2. storage and fall time test circuit
mmbt2907al, SMMBT2907AL www. onsemi.com 3 typical characteristics figure 3. dc current gain i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 10 v figure 4. collector saturation region i b , base current (ma) -0.4 -0.6 -0.8 -1.0 -0.2 v , collector-emitter voltage (volts) 0 ce i c = -1.0 ma -0.005 -10 ma -0.01 -100 ma -500 ma -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 figure 5. turn?on time i c , collector current 300 -5.0 figure 6. turn?off time i c , collector current (ma) -5.0 t, time (ns) t, time (ns) 200 100 70 50 30 20 10 7.0 5.0 3.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 t r 2.0 v t d @ v be(off) = 0 v v cc = -30 v i c /i b = 10 t j = 25 c 500 300 100 70 50 30 20 10 7.0 5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 200 t f t s = t s - 1/8 t f v cc = -30 v i c /i b = 10 i b1 = i b2 t j = 25 c
mmbt2907al, SMMBT2907AL www. onsemi.com 4 typical small?signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 7. frequency effects f, frequency (khz) 10 0.01 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) nf, noise figure (db) f = 1.0 khz i c = -50 a -100 a -500 a -1.0 ma r s = optimum source resistance 8.0 6.0 4.0 2.0 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c = -1.0 ma, r s = 430 -500 a, r s = 560 -50 a, r s = 2.7 k -100 a, r s = 1.6 k figure 9. capacitances reverse voltage (volts) 30 figure 10. current?gain ? bandwidth product i c , collector current (ma) c, capacitance (pf) -0.1 2.0 f t , current-gain bandwidth product (mhz) 20 10 7.0 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 400 300 200 100 80 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 c eb c cb v ce = -20 v t j = 25 c figure 11. collector emitter saturation voltage vs. collector current figure 12. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) i c /i b = 10 150 c ?55 c 25 c 0.4 0.6 0.9 i c /i b = 10 150 c ?55 c 25 c
mmbt2907al, SMMBT2907AL www. onsemi.com 5 typical small?signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 13. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v be(on) , base?emitter voltage (v) 0.4 0.8 1.0 v ce = 1 v 150 c ?55 c 25 c figure 14. temperature coefficients i c , collector current (ma) r vc for v ce(sat) coefficient (mv/ c) +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 r vb for v be figure 15. safe operating area v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 ic (a) single pulse test @ t a = 25 c 100 ms 1 s 10 ms 1 ms 100 s 10 s
mmbt2907al, SMMBT2907AL www. onsemi.com 6 package dimensions sot?23 (to?236) case 318?08 issue ar style 6: pin 1. base 2. emitter 3. collector d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view soldering footprint 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbt2907alt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ?
|
